Preparation and Investigation of p GaAs/n Cd1 xZnxS1 yTey Heterojunctions Deposited by Electrochemical Deposition
| contributor author | Mamedov, Huseyn M. | |
| contributor author | Konya, Zoltan | |
| contributor author | Muradov, Mustafa B. | |
| contributor author | Kukovecz, Akos | |
| contributor author | Kordas, Krisztian | |
| contributor author | Hashim, Daniel P. | |
| contributor author | Mamedov, Vusal U. | |
| date accessioned | 2017-05-09T01:12:34Z | |
| date available | 2017-05-09T01:12:34Z | |
| date issued | 2014 | |
| identifier issn | 0199-6231 | |
| identifier other | sol_136_04_044503.pdf | |
| identifier uri | http://yetl.yabesh.ir/yetl/handle/yetl/156327 | |
| description abstract | Anisotype heterojunctions of pGaAs/nCd1xZnxS1yTey have been fabricated by preparing ntype Cd1xZnxS1yTey thin films onto pGaAs single crystal wafers using an electrochemical deposition method. The voltammetric behavior of the Cd1xZnxS1yTey thin films on GaAs substrates from aqueous solutions was studied. Electrical and photoelectrical properties of heterojunctions were studied depending on the Cd1xZnxS1yTey films composition (x = 0.1 أ·â€‰0.8; y = 0.2; 0.4; 0.9) and heat treatment (HT) regime in argon atmosphere (100–450 آ°ذ، during 3–16 min). Under AM1.5 conditions, the opencircuit voltage, shortcircuit current, fill factor, and efficiency of our best cell, was Voc = 584 mV, Jsc = 14.54 mA/cm2, FF = 0.6, and خ·â€‰= 6.7%, respectively. | |
| publisher | The American Society of Mechanical Engineers (ASME) | |
| title | Preparation and Investigation of p GaAs/n Cd1 xZnxS1 yTey Heterojunctions Deposited by Electrochemical Deposition | |
| type | Journal Paper | |
| journal volume | 136 | |
| journal issue | 4 | |
| journal title | Journal of Solar Energy Engineering | |
| identifier doi | 10.1115/1.4027694 | |
| journal fristpage | 44503 | |
| journal lastpage | 44503 | |
| identifier eissn | 1528-8986 | |
| tree | Journal of Solar Energy Engineering:;2014:;volume( 136 ):;issue: 004 | |
| contenttype | Fulltext |
