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contributor authorDavid Lacroix
contributor authorKarl Joulain
contributor authorJerome Muller
contributor authorGilles Parent
date accessioned2017-05-09T00:52:16Z
date available2017-05-09T00:52:16Z
date copyrightMay, 2012
date issued2012
identifier issn0022-1481
identifier otherJHTRAO-27940#051007_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/149461
description abstractThis study deals with phonon heat transport in silicon nanowires. A review of various methods that can be used to assess thermal conductance of such nanodevices is presented. Here, a specific attention is paid to the case of the Landauer Formalism, which can describe extremely thin wires conductance. In order to use this technique, the calculation of propagating modes in a silicon nanowire is necessary. Among the several existing models allowing such calculation, the elastic wave theory has been used to obtain the normal mode number. Besides, in this study, the transmission and reflection of phonon at the interface between two nanostructures are discussed. Using the diffuse mismatch model (DMM), the global transmissivity of the system made of a nanowire suspended between two thermal reservoirs is addressed. Then, the calculations of normal modes’ numbers and thermal conductances of several silicon nanowires, with various diameters set between bulk thermal reservoirs, are presented and compared to other models and available experiments.
publisherThe American Society of Mechanical Engineers (ASME)
titleSilicon Nanowire Conductance in the Ballistic Regime: Models and Simulations
typeJournal Paper
journal volume134
journal issue5
journal titleJournal of Heat Transfer
identifier doi10.1115/1.4005637
journal fristpage51007
identifier eissn1528-8943
keywordsElectrical conductance
keywordsNanowires AND Reservoirs
treeJournal of Heat Transfer:;2012:;volume( 134 ):;issue: 005
contenttypeFulltext


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