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contributor authorTakashi Anzawa
contributor authorMasanori Yamagiwa
contributor authorTadahiro Shibutani
contributor authorMasaki Shiratori
contributor authorQiang Yu
date accessioned2017-05-09T00:37:14Z
date available2017-05-09T00:37:14Z
date copyrightSeptember, 2010
date issued2010
identifier issn1528-9044
identifier otherJEPAE4-26306#031012_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/142954
description abstractThis paper presents a simulation method to evaluate the thermal fatigue life of a power module. A coupled electrical-thermal analysis was performed to obtain the nonuniform temperature distribution of electric current. Then, a thermomechanical analysis was carried out based on the temperature distribution from the electrical-thermal analysis. Since crack propagation can change the route of heat transfer, a crack path simulation technique was used to investigate the fracture behavior of the power module. The crack initiates in the solder joint below the Al bonding wire of the insulated gate bipolar transistor module and propagates by increasing the diameter. The effect of the bonding type on power cycling fatigue life is also discussed. The fracture process was found to depend on the type of bonding. Lead frame bonding was found to be more effective than wire bonding.
publisherThe American Society of Mechanical Engineers (ASME)
titleReliability Evaluation on Deterioration of Power Device Using Coupled Electrical-Thermal-Mechanical Analysis
typeJournal Paper
journal volume132
journal issue3
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.4002451
journal fristpage31012
identifier eissn1043-7398
keywordsTemperature
keywordsJoules
keywordsBonding
keywordsReliability
keywordsWire
keywordsCrack propagation
keywordsFatigue life
keywordsSolder joints
keywordsTemperature distribution
keywordsStructural frames
keywordsFracture (Materials)
keywordsHeating
keywordsWire bonding
keywordsSimulation
keywordsElectric current
keywordsFlow (Dynamics)
keywordsFatigue
keywordsFracture (Process)
keywordsTransistors
keywordsHeat transfer AND Gates (Closures)
treeJournal of Electronic Packaging:;2010:;volume( 132 ):;issue: 003
contenttypeFulltext


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