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contributor authorL. Westfall
contributor authorM. A. Singh
contributor authorS. Saimoto
contributor authorB. J. Diak
date accessioned2017-05-09T00:28:13Z
date available2017-05-09T00:28:13Z
date copyrightApril, 2008
date issued2008
identifier issn0094-4289
identifier otherJEMTA8-27105#021011_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/138091
description abstractCrystalline defects other than the essential dislocations are produced by dislocation intersections resulting in debris, which can transform into loops, point defects, and∕or nanovoids. The stress concentrations ahead of slip clusters promote void formation leading to incipient cracks. To evaluate the progression of these processes during deformation, dynamic dislocation-defect analysis was applied to nominally pure aluminum, Al–Mg, and Al–Cu alloys. In the case of nanovoid formation, small angle X-ray scattering (SAXS) was used to quantitatively assess if the void size and its volume fraction can be determined to directly correlate with the measured thermodynamic response values. The SAXS signal from the nanovoids in nominally pure aluminum is distinctly measurable. On the other hand, thermomechanical processing of even nominally pure aluminum results in the formation of nanoprecipitates, which requires future calibration.
publisherThe American Society of Mechanical Engineers (ASME)
titleDynamic Dislocation-Defect Analysis and SAXS Study of Nanovoid Formation in Aluminum Alloys
typeJournal Paper
journal volume130
journal issue2
journal titleJournal of Engineering Materials and Technology
identifier doi10.1115/1.2841619
journal fristpage21011
identifier eissn1528-8889
keywordsDeformation
keywordsTemperature
keywordsX-rays
keywordsAluminum
keywordsAluminum alloys
keywordsProduct quality
keywordsStress
keywordsRadiation scattering
keywordsElectromagnetic scattering
keywordsDislocations
keywordsAlloys
keywordsFlow (Dynamics) AND Copper alloys
treeJournal of Engineering Materials and Technology:;2008:;volume( 130 ):;issue: 002
contenttypeFulltext


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