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contributor authorJ. F. Osterle
contributor authorS. R. Swantner
date accessioned2017-05-08T23:36:27Z
date available2017-05-08T23:36:27Z
date copyrightNovember, 1991
date issued1991
identifier issn0199-6231
identifier otherJSEEDO-28232#219_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/109103
description abstractThe thermodynamic dissipations in crystalline silicon solar cells are identified and evaluated. The ratio of the exergy of the output electrical power to the exergy of the input solar radiation is the effectiveness of the solar cell. The input exergy is converted to the output exergy (the electrical power delivered) with a series of dissipations. These dissipations are identified and evaluated for crystalline silicon cells in terms of the thickness and certain fundamental properties of the light absorbing silicon semiconductor (in this case a P -type material). It is assumed that the N -type material is very thin and absorbs no radiation. For representative values of these properties and a range of thicknesses, it is found that the dissipations due to transmission and thermalization and in the photogeneration process are dominant. The dissipations due to the dark current and recombination are small.
publisherThe American Society of Mechanical Engineers (ASME)
titleConversion of Solar Radiation Into Electricity in Silicon Solar Cells: A Thermodynamic Assessment
typeJournal Paper
journal volume113
journal issue4
journal titleJournal of Solar Energy Engineering
identifier doi10.1115/1.2929965
journal fristpage219
journal lastpage223
identifier eissn1528-8986
keywordsSolar radiation
keywordsSilicon
keywordsSolar cells
keywordsExergy
keywordsElectricity (Physics)
keywordsThickness
keywordsSemiconductors (Materials)
keywordsRadiation (Physics) AND Dark current
treeJournal of Solar Energy Engineering:;1991:;volume( 113 ):;issue: 004
contenttypeFulltext


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