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An Enhanced Statistical Phonon Transport Model for Nanoscale Thermal Transport
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Silicon nanowire transistors are thought to be ideal transistor devices due to electrostatic control of the gate, and the International Roadmap for Devices and Systems has indicated that arrays of these devices are possible ...
Transient Three-Dimensional Thermal Simulation of a Fin Field-Effect Transistor With Electron–Phonon Heat Generation, Three Phonon Scattering, and Drift With Periodic Switching
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: The International Roadmap for Devices and Systems shows Fin field-effect transistor (FET) array transistors as the mainstream structure for logic devices. Traditional methods of Fourier heat transfer analysis that are ...
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