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    Influence of Precursor Concentration on Crystalline Quality of GaN Thin Films Grown on a Sapphire Wafer 

    Source: Journal of Manufacturing Science and Engineering:;2021:;volume( 143 ):;issue: 011:;page 0111001-1
    Author(s): Jumaah, Omar Dhannoon; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Chemical vapor deposition (CVD), which involves chemical reactions in gases for deposition on a heated surface, is an extensively used manufacturing technique for obtaining thin films of materials like silicon, graphene, ...
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    Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor 

    Source: Journal of Thermal Science and Engineering Applications:;2023:;volume( 015 ):;issue: 006:;page 61005-1
    Author(s): Jumaah, Omar Dhannoon; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Gallium nitride (GaN) thin films have attracted considerable attention for manufacturing optical and electronic devices. They have wide bandgap and superb performance in these applications. The reliability and durability ...
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    Experimental Study of the Effect of Precursor Composition on the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process 

    Source: Journal of Heat Transfer:;2021:;volume( 143 ):;issue: 010:;page 0102201-1
    Author(s): Jumaah, Omar Dhannoon; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride that are employed in the fabrication of electronic ...
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