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RISThe Effect of Carrier Gas and Reactor Pressure on Gallium Nitride Growth in MOCVD Manufacturing Process
Publisher: American Society of Mechanical Engineers (ASME)
Abstract: Gallium nitride (GaN) is an attractive material for manufacturing light emitting diodes and other electronic devices due to its wide band-gap and superb optoelectronic performance. The quality of GaN thin film determines ...
Influence of Precursor Concentration on Crystalline Quality of GaN Thin Films Grown on a Sapphire Wafer
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Chemical vapor deposition (CVD), which involves chemical reactions in gases for deposition on a heated surface, is an extensively used manufacturing technique for obtaining thin films of materials like silicon, graphene, ...
Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Gallium nitride (GaN) thin films have attracted considerable attention for manufacturing optical and electronic devices. They have wide bandgap and superb performance in these applications. The reliability and durability ...
Experimental Study of the Effect of Precursor Composition on the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride that are employed in the fabrication of electronic ...