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    Search for an Optimum in Thermal Systems and Processes 

    Source: ASME Journal of Heat and Mass Transfer:;2023:;volume( 145 ):;issue: 005:;page 52901-1
    Author(s): Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This paper considers the optimization of thermal systems and processes, which are of interest in a wide range of practical applications, on the basis of mathematical and numerical modeling as well as experimental data. ...
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    Thermal Issues in Materials Processing 

    Source: Journal of Heat Transfer:;2013:;volume( 135 ):;issue: 006:;page 61701
    Author(s): Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This paper considers the thermal aspects that frequently arise in practical materials processing systems. Important issues such as feasibility, product quality, and production rate have a thermal basis in many cases and ...
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    Experimental Study of the Effect of Precursor Composition on the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process 

    Source: Journal of Heat Transfer:;2021:;volume( 143 ):;issue: 010:;page 0102201-1
    Author(s): Jumaah, Omar Dhannoon; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride that are employed in the fabrication of electronic ...
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    The Effect of Carrier Gas and Reactor Pressure on Gallium Nitride Growth in MOCVD Manufacturing Process 

    Source: Journal of Heat Transfer:;2019:;volume( 141 ):;issue: 008:;page 82101
    Author(s): Jumaah, Omar; Jaluria, Yogesh
    Publisher: American Society of Mechanical Engineers (ASME)
    Abstract: Gallium nitride (GaN) is an attractive material for manufacturing light emitting diodes and other electronic devices due to its wide band-gap and superb optoelectronic performance. The quality of GaN thin film determines ...
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    Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process 

    Source: Journal of Manufacturing Science and Engineering:;2013:;volume( 135 ):;issue: 006:;page 61013
    Author(s): Meng, Jiandong; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A detailed mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed first, and the complete chemical mechanisms are introduced. Then, ...
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    Influence of Precursor Concentration on Crystalline Quality of GaN Thin Films Grown on a Sapphire Wafer 

    Source: Journal of Manufacturing Science and Engineering:;2021:;volume( 143 ):;issue: 011:;page 0111001-1
    Author(s): Jumaah, Omar Dhannoon; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Chemical vapor deposition (CVD), which involves chemical reactions in gases for deposition on a heated surface, is an extensively used manufacturing technique for obtaining thin films of materials like silicon, graphene, ...
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    Numerical Investigation on Natural Convection in Inclined Channels Partially Filled With Asymmetrically Heated Metal Foam 

    Source: ASME Journal of Heat and Mass Transfer:;2023:;volume( 145 ):;issue: 004:;page 42602-1
    Author(s): Andreozzi, Assunta; Buonomo, Bernardo; Jaluria, Yogesh; Manca, Oronzio
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A numerical study on natural convection in an inclined channel partially filled with open metal foam is investigated in two-dimensional laminar and incompressible and steady-state condition. The upper wall is heated at ...
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    Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor 

    Source: Journal of Thermal Science and Engineering Applications:;2023:;volume( 015 ):;issue: 006:;page 61005-1
    Author(s): Jumaah, Omar Dhannoon; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Gallium nitride (GaN) thin films have attracted considerable attention for manufacturing optical and electronic devices. They have wide bandgap and superb performance in these applications. The reliability and durability ...
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    A Numerical and Experimental Study on the Fabrication GaN Films by Chemical Vapor Deposition 

    Source: Journal of Manufacturing Science and Engineering:;2020:;volume( 142 ):;issue: 001:;page 011001-1
    Author(s): Wong, Sun; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Computational modeling and simulation are employed to study a rotating susceptor vertical impinging chemical vapor deposition (CVD) reactor to predict GaN film deposition. Many metal-organic chemical vapor deposition reactor ...
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    Design and Optimization of Multiple Microchannel Heat Transfer Systems 

    Source: Journal of Thermal Science and Engineering Applications:;2014:;volume( 006 ):;issue: 001:;page 11004
    Author(s): Zhang, Jingru; Lin, Po Ting; Jaluria, Yogesh
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: In this paper, two different configurations of multiple microchannel heat sinks, with fluid flow, are investigated for heat removal: straight and Ushaped channel designs. Numerical models are utilized to study the multiphysics ...
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