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RISPreparation and Investigation of p GaAs/n Cd1 xZnxS1 yTey Heterojunctions Deposited by Electrochemical Deposition
Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Anisotype heterojunctions of pGaAs/nCd1xZnxS1yTey have been fabricated by preparing ntype Cd1xZnxS1yTey thin films onto pGaAs single crystal wafers using an electrochemical deposition method. The voltammetric behavior of ...